Infineon Technologies has expanded its XHP 2 power module portfolio to include new CoolSiC MOSFET 2300 V variants for high-voltage renewable energy and energy storage applications.

The new 2300 V-class modules support DC-link voltages of up to 1500 V and are designed to address increasing demand for higher-voltage power conversion architectures across renewable energy infrastructure. Available in multiple configurations, the modules offer on-resistance values ranging from 1 mΩ to 2 mΩ along with isolation voltages of 4 kV or 6 kV.

Industrial Sustainability Monthly image of Infineon XHP 2 CoolSiC MOSFET power modules for renewable energy systems.

Infineon has expanded its XHP™ 2 power module portfolio with new variants incorporating CoolSiC™ MOSFETs 2300 V.

By utilizing silicon carbide technology, the modules reduce switching and conduction losses compared to conventional silicon-based power semiconductor solutions. The improved efficiency and power density can enable inverter systems to operate at higher switching frequencies while helping reduce harmonics and overall system size. Infineon notes that the modules are well suited for renewable energy applications including wind power systems, photovoltaic infrastructure, and battery energy storage platforms.

Implemented within the company’s XHP 2 package platform, the modules feature symmetrical switching behavior intended to simplify paralleling within large-scale power converters. The standardized platform is designed to allow developers to optimize efficiency and performance according to specific application requirements across different high-voltage system architectures.

All module variants integrate Infineon’s own .XT interconnection technology, which is designed to improve reliability and extend operational lifetime in demanding power electronics environments. The modules are also available with a pre-applied thermal interface material intended to simplify assembly processes while supporting consistent thermal performance. Infineon highlighted several system-level performance results associated with the portfolio expansion. In a wind power demonstration system, a power density of 300 kW/L was achieved, while battery storage system testing demonstrated semiconductor losses of less than 0.7 percent of output power.

The expanded XHP 2 CoolSiC portfolio is intended to support scalable next-generation high-voltage power systems across a broad range of renewable energy and industrial electrification applications.

About Infineon Technologies AG:

Infineon Technologies AG develops semiconductor technologies focused on power systems, automotive electronics, industrial power control, security technologies, and IoT applications. Headquartered in Neubiberg, Germany, the company supplies semiconductor solutions used across renewable energy, automotive, industrial automation, communications, consumer electronics, and power conversion markets. Infineon’s power semiconductor portfolio includes silicon carbide, gallium nitride, and silicon-based technologies designed to support electrification, energy efficiency, decarbonization, and advanced power management applications worldwide. Infineon Technologies AG is publicly traded on the Frankfurt Stock Exchange under the ticker symbol IFX and on the OTCQX International market under the symbol IFNNY. For more information, please click here.

Source/Photo Credit: Infineon Technologies AG


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Molly Bakewell Chamberlin
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